Breaking bandgap limitation: Improved photosensitization in plasmonic-based CsPbBr3 photodetectors via hot-electron injection

A higher detection performance and stability are always pursued in the development of photoelectric or photo-electrochemical devices, critical for their further commercial application. Here, we report a CsPbBr3-based photodetector engineered from multilayer Si/Ag islands/CsPbBr3/PMMA system, showing an evidently enhanced photosensitization breaking absorption edge CsPbBr3. On one hand, photocurrent contribution plasmonic hot-electron injection effectively extends limit our photodetectors much below band CsPbBr3, depending only on Schottky barrier. other surface plasmons nanoscale silver islands can considerably improve light harvesting ability CsPbBr3 layer, ascribed to confinement adjacency islands. Numerical simulations show localized enhancement near islands, corresponding excitation plasmon resonances. It shows intensity distribution inside layer consisting with Ag accordance current–voltage(I–V) characteristics. Ultimately, presents >10-fold increase doubling operating lifetime. Our work provides important insight into realization optoelectronic devices based plasmonics.